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Volumn 11, Issue 4 SUPPL., 2011, Pages
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A study on the electrical activation behavior of boron in Si thin film doped by IMD
a
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Author keywords
Crystallization; Electrical activation; Grain boundary segregation; Ion mass doping
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Indexed keywords
A-SI FILMS;
AMORPHOUS SILICON (A-SI);
AMORPHOUS SILICON THIN FILMS;
ANNEALING TEMPERATURES;
BORON-DOPED;
CRYSTALLINE STRUCTURE;
ELECTRICAL ACTIVATION;
GLASS SUBSTRATES;
GRAIN BOUNDARY EFFECTS;
GRAIN BOUNDARY SEGREGATION;
ION MASS DOPING;
MINIMUM RESISTANCE;
OPTIMUM SATURATION;
PHASE TRANSFORMATION;
RESISTANCE CHANGE;
SINGLE CRYSTALLINE SILICON;
AMORPHOUS FILMS;
ANNEALING;
BORON;
CRYSTALLINE MATERIALS;
CRYSTALLIZATION;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
POLYSILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SUBSTRATES;
THIN FILMS;
AMORPHOUS SILICON;
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EID: 80455155099
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2011.03.083 Document Type: Conference Paper |
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Times cited : (23)
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References (9)
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