The effect of doping on metal-induced lateral crystallization rate

Electronic Materials Letters

Volumn 4, Issue 2, 2008, Pages 79-83

  Byun, Chang Woo ^a   Lee, Yong Woo ^a   Park, Jin Hyun ^a   Seok, Chul Kyun ^a   Kim, Young Soo ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

Dopant; Doping; IMD; Ion mass doping; MILC

Indexed keywords

EID: 57049087015     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. K. Nakazawa, J. Appl. Phys. 69, 1703 (1991),
2. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, J. Iwata, S. Tsuda, and S. Nakano, IEDM 1991 Tech. Dig., p. 565-566, IEEE, Washington, D.C. (1991).
3. S. W. Lee and S. K. Joo, IEEE Electron Device Lett. 17, 160 (1996).
4. S. W. Lee, Y. C. Jeon, and S. K. Joo, Appl. Phys. Lett. 66, 1671 (1995).
5. Tianfu Ma and Man Wong, J. Appl. Physics. 91, 1236 (2002).
6. S. W. Lu, C. W. Nieh, and L. J. Chen, Appl. Phys. Lett. 49, 1770 (1986).
7. J. C. McCallum, Nucl. Instr. and Meth. in Phys. Res. B 148, 350 (1999).
8. J. A. Roth, G. L. Olson, D. C. Jacobson, J. M. Poate, and C. Kirschbaum, Mater. Res. Soc. Symp. Proc. 205, 45 (1992).
9. J. R. Woodyard and D. R. Browen, J. Appl. Phys. 57, 2243 (1985).
10. H.-Y. Kim, J.-B. Choi, and H.-Y. Lee, J. Vac. Sci. Technol. A 17, 3240 (1999).
11. K.-B. Kim, Ph. D thesis, pp. 20-22, Seoul National University, Seoul (2003).