Lattice thermal conductivity of ultra-thin freestanding layers: Face-centered cubic cell model versus continuum approach

Journal of Nanoelectronics and Optoelectronics

Volumn 4, Issue 1, 2009, Pages 170-173

  Nika, Denis L ^a,b   Zincenco, Nadejda D ^a   Pokatilov, Evghenii P ^a,b  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Acoustic phonons; Nanostructure; Silicon; Thermal conductivity

Indexed keywords

ACOUSTIC PHONONS; FACE-CENTERED CUBIC; GROUP VELOCITIES; HIGH ENERGY; HIGH TEMPERATURE; LATTICE THERMAL CONDUCTIVITY; PHONON ENERGIES; PHONON MODE; PHONON THERMAL TRANSPORT; SI LAYER; ULTRA-THIN;

CRYSTAL LATTICES; ELECTROMAGNETIC WAVE EMISSION; LIGHT VELOCITY; NANOSTRUCTURES; PHONONS; SILICON;

THERMAL CONDUCTIVITY;

EID: 80455127776     PISSN: 1555130X     EISSN: 15551318     Source Type: Journal    
DOI: 10.1166/jno.2009.1018     Document Type: Article

References (24)

1. A. Balandin, J. Nanosci. Nanotechnol. 5, 1015 (2005).
2. A. A. Balandin, E. P. Pokatilov, and D. L. Nika, J. Nanoelectron. Optoelectron. 2, 140 (2007).
3. A. Balandin and K. L. Wang, Phys. Rev. B 58, 1544 (1998).
4. E. P. Pokatilov, D. L. Nika, and A. A. Balandin, Superlatt. Microstruct. 33, 155 (2003).
5. E. P. Pokatilov, D. L. Nika, and A. A. Balandin, Appl. Phys. Lett. 85, 825 (2004).
6. M. Shamsa, W. L. Liu, A. A. Balandin, C. Casiraghi, W. I. Milne, and A. C. Ferrari, Appl. Phys. Lett. 89, 161921 (2006).
7. D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003).
8. W. Liu and M. Asheghi, J. Heat Transfer 128, 75 (2006).
9. J. Zou and A. Balandin, J. Appl. Phys. 89, 2932 (2001).
10. E. P. Pokatilov, D. L. Nika, and A. A. Balandin, Phys. Rev. B 72, 113311 (2005).
11. E. P. Pokatilov, D. L. Nika, and A. A. Balandin, Superlatt. Micwstruct. 38, 168 (2005).
12. D. Li, Y. Wu, P. Kim, L. Shi, P. Yang, and A. Majumdar, Appl. Phys. Lett. 83, 2934 (2003).
13. N. Mingo, Phys. Rev. B 68, 113308 (2003).
14. N. Mingo, L. Yang, D. Li, and A. Majumdar, Nano Lett. 3, 1713 (2003).
15. E. P. Pokatilov, D. L. Nika, and A. A. Balandin, J. Appl. Phys. 95, 5626 (2004).
16. N. Bannov, V. Aristov, V. Mitin, and M. A. Stroscio, Phys. Rev. B 51, 9930 (1995).
17. E. P. Pokatilov, D. L. Nika, A. S. Askerov, and A. A. Balandin, J. Appl. Phys. 102, 054304 (2007).
18. X. Lu and J. Chu, J. Appl. Phys. 101, 114323 (2007).
19. J. Zou, X. Lange, and C. Richardson, J. Appl. Phys. 100, 104309 (2006).
20. S. Tamura, Y. Tanaka, and H. J. Maris, Phys. Rev. B 60, 2627 (1999).
21. N. D. Zincenco, D. L. Nika, E. P. Pokatilov, and A. A. Balandin, J. Physics: Conference Series 92, 012086 (2007).
22. J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florescu, and H. F. Pollak, J. Appl. Phys. 92, 2534 (2002).
23. P. G. Klemens, International Journal of Thermophysics 22, 265 (2001).
24. F. Schaffler, Properties of Advanced Semiconductor Materials GaN, A1N, InN, BN, SiC, SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, John Wiley & Sons, Inc., New York (2001), pp. 149-188.