Scaling limits of organic thin film transistors

Organic Electronics

Volumn 11, Issue 4, 2010, Pages 626-631

  Hoppe, A ^a   Knipp, D ^a   Gburek, B ^a   Benor, A ^a   Marinkovic, M ^a   Wagner, V ^a  

^a JACOBS UNIVERSITY BREMEN   (Germany)

Author keywords

Scaling behavior; Switching speed; Thin film transistors

Indexed keywords

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

DEVICE GEOMETRIES; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; OVERLAP CAPACITANCE; SCALING BEHAVIOR; SCALING LIMITS; SPECIFIC CONTACT RESISTANCES; SWITCHING SPEED;

THIN FILM CIRCUITS;

EID: 77549087617     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.01.002     Document Type: Article

References (34)

1. Gelinck G.H., Huitema H.E.A., van Veendaal E., Cantatore E., Schrijnemakers L., van der Putten J.B.P.H., Geuns T.C.T., Beenhakkers M., Giesbers J.B., Huisman B.-H., Meijer E.J., Benito E.M., Touwslager F.J., Marsman A.W., van Rens B.J.E., and de Leeuw D.M. Nat. Mater. 3 (2004) 106-110
2. Baeg K.-J., Noh Y.-Y., Ghiem J., Kang S.-J., Lee H., and Kim D.-Y. Adv. Mater. 18 (2006) 3179-3183
3. Kelley T.W., Baude P.F., Gerlach C., Ender D.E., Muyres D., Haase M.A., Vogel D.E., and Theiss S.D. Chem. Mater. 16 (2004) 4413-4422
4. Anthony J.E., Brooks J.S., Eaton D.L., and Parkin S.R. J. Am. Chem. Soc. 123 (2001) 9482
5. Sirringhaus H., Tessler N., and Friend R.H. Science 280 (1998) 1741
6. Steudel S., Myny K., Arkhipov V., Deibel C., De Vusser S., Genoe J., and Heremans P. Nat. Mater. 4 (2005) 597-600
7. Karl N. In: Farchioni R., and Grosso G. (Eds). Organic Electronic Materials (2001), Springer, Berlin
8. Benor A., Hoppe A., Wagner V., and Knipp D. Org. Electron. 8 (2007) 749-758
9. Hoppe A., Balster T., Muck T., and Wagner V. Phys. Stat. Sol. 205 3 (2008) 612
10. Kitamura M., and Arakawa Y. Appl. Phys. Lett. 95 (2009) 023503
11. Halik M., Klauk H., Zschieschang U., Schmid G., Dehm C., Schütz M., Maisch S., Effenberger F., Brunnbauer M., and Stellacci F. Nature 431 7011 (2004) 963
12. Chou S.Y., Krauss P.R., and Renstrom P.J. Science 272 5258 (1996) 85-87
13. Xia Y., and Whitesides G.M. Angew. Chem. Int. Ed. 37 (1998) 550-575
14. Leufgen M., Lebib A., Muck T., Bass U., Wagner V., Borzenko T., Schmidt G., Geurts J., and Molenkamp L.W. Appl. Phys. Lett. 84 (2004) 9
15. Wang L., Fine D., Jung T., Basu D., von Seggern H., and Dodabalapur A. Appl. Phys. Lett. 85 (2004) 1772
16. Wagner V., Wöbkenberg P., Hoppe A., and Seekamp J. Appl. Phys. Lett. 89 (2006) 243515
17. Shur M. Physics of Introduction to Electronic Devices (1990), John Wiley & Sons
18. Hoppe A., Seekamp J., Balster T., Götz G., Bäuerle P., and Wagner V. Appl. Phys. Lett. 91 (2007) 132115
19. Benor A., and Knipp D. Org. Electron. 9 (2008) 209-219
20. Schroder D.K. Semiconductor Material and Device Characterization. second ed. (1998), Wiley, New York
21. Chan K.-Y., Bunte E., Stiebig H., and Knipp D. Semicond. Sci. Technol. 22 (2007) 1213-1219
22. Klauk H., Schmid G., Radlik W., Weber W., Zhou L., Sheraw C.D., Nichols J.A., and Jackson T.N. Solid-State Electron. 47 (2003) 297-301
23. D. Belaineh, D. Knipp, V. Wagner, in press.
24. Noh Y.Y., Zhao N., Caironi M., and Sirringhaus H. Nat. Nanotechnol. 3 1 (2008) 58
25. Sekitani T., Noguchi Y., Zschieschang U., Klauk H., and Someya T. Proc. Natl. Acad. Sci. 105 13 (2008) 4976
26. Necliudov P.V., Shur M.S., Gundlach D.J., and Jackson T.N. J. Appl. Phys. 88 (2000) 6594
27. Vanoni C., Tsujino S., and Jung T.A. Appl. Phys. Lett. 90 (2007) 193119
28. Ando M., Kawasaki M., Imazeki S., Sasaki H., and Kamata T. Appl. Phys. Lett. 85 (2004) 1849
29. Ryu I., Kim H.C., Kim S.K., and Jang J. IEEE Electron Dev. Lett. 18 (1997) 272
30. Wong W.S., Chow E.M., Lujan R., Geluz-Aguilar V., and Chabinyc M.L. Appl. Phys. Lett. 89 (2006) 142118
31. Horowitz G., Hajlaoui R., Bouchriha H., Bourguiga R., and Hajlaoui M. Adv. Mater. 10 12 (1999) 923
32. Knipp, and Northrup J.E. Adv. Mater. 21 (2009) 2511-2515
33. de Vusser S., Steudel S., Myny K., Genoe J., and Heremans P. Appl. Phys. Lett. 88 (2006) 162116
34. Knipp D., Benor A., Wagner V., and Muck T. J. Appl. Phys. 101 (2007) 044504