PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1603-1605

  Yang, Po Yu ^a   Wang, Jyh Liang ^b   Chiu, Po Chun ^a   Chou, Jung Chuan ^c   Chen, Cheng Wei ^c   Li, Hung Hsien ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Al doped zinc oxide (AZO); Extended gate field effect transistor (EGFET); Hydrothermal method; Low temperature

Indexed keywords

AL-DOPED ZINC OXIDE; AL-DOPED ZNO; CRYSTALLINITIES; DISPOSABLE BIOSENSOR; EXTENDED-GATE FIELD-EFFECT TRANSISTORS; HYDROTHERMAL GROWTH; HYDROTHERMAL METHODS; HYDROTHERMALLY; HYDROTHERMALLY SYNTHESIZED; LOW TEMPERATURES; PH SENSING; SENSING RANGES; STRUCTURAL DEFECT; VOLTAGE SENSITIVITY; WELL-ALIGNED NANOWIRES;

ALUMINUM; BIOSENSORS; FIELD EFFECT TRANSISTORS; NANOWIRES; PH EFFECTS; TRANSISTORS; ZINC OXIDE;

PH SENSORS;

EID: 80054995631     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2164230     Document Type: Article

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