Ion sensitivity of the flowerlike ZnO nanorods synthesized by the hydrothermal process

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1462-1465

  Chiang, Jung Lung ^a   Hsu, Jung Fu ^a   Lee, Shih Fong ^b   Lee, Li Ying ^b   Liu, Han Ying ^b  

^a CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PH EFFECTS; PH SENSORS; SCANNING ELECTRON MICROSCOPY; ZINC OXIDE; ZINC SULFIDE;

AVERAGE DIAMETER; EXTENDED-GATE FIELD-EFFECT TRANSISTORS; HEXAGONAL PHASE; HEXAGONAL WURTZITE STRUCTURE; HYDROTHERMAL PROCESS; ION SENSITIVITIES; KEITHLEY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; OUTPUT VOLTAGES; PH BUFFERS; PH SENSING; PH VALUE; PRE-TREATMENT; REFLECTION PEAKS; SCANNING ELECTRON MICROSCOPY IMAGE; SEMICONDUCTOR PARAMETERS; SENSOR HEAD; SILICON SUBSTRATES; TWO-STEP PROCESS; WURTZITE STRUCTURE; X RAY DIFFRACTOMETERS; ZINC ACETATE; ZNO; ZNO NANOROD;

NANORODS;

EID: 79953872226     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3079766     Document Type: Conference Paper

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