Analysis of voltage breakdown characteristic of IGBT

Diangong Jishu Xuebao/Transactions of China Electrotechnical Society

Volumn 26, Issue 8, 2011, Pages 145-150

  Wang, Bo ^a   Hu, An ^a   Tang, Yong ^a   Chen, Ming ^a  

^a NAVAL UNIVERSITY OF ENGINEERING   (China)

Author keywords

Avalanche breakdown; Failure mechanism; Failure mode; IGBT; Shorten time over voltage

Indexed keywords

AVALANCHE BREAKDOWN; EXTENSIVE DESIGN; FAILURE MECHANISM; IGBT MODELS; JUNCTION TEMPERATURES; OPEN CIRCUITS; OVER-VOLTAGES; P-N JUNCTION; PEAK VOLTAGE; SHORT CIRCUIT; SWITCHING TRANSIENT; THERMAL FAILURE; VOLTAGE BREAKDOWN;

ELECTRIC NETWORK ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

POWER QUALITY;

EID: 80054984200     PISSN: 10006753     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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