Melting point of wurtzite-type GaN crystal

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2420-2423

  Harafuji, K ^a   Tsuchiya, T ^b   Kawamura, K ^b  

^a PANASONIC CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN CRYSTALS; PRESSURE DEPENDENCE;

COMPUTER SIMULATION; GALLIUM NITRIDE; LIQUIDS; MOLECULAR DYNAMICS; PHASE INTERFACES; ZINC SULFIDE;

MELTING POINT;

EID: 80054968798     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303476     Document Type: Conference Paper

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