Coupling the level set method with an electrothermal solver to simulate GST based PCM cells

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 63-66

  Gliere A ^a   Cueto, O ^a   Hazart, J ^a  

^a CEA GRENOBLE   (France)

Author keywords

Crystallization; Level Set Method; PCM Simulation

Indexed keywords

LEVEL SET METHOD; THERMODYNAMIC MODEL;

CRYSTALLIZATION; DROP BREAKUP; LEVEL MEASUREMENT; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES;

NUMERICAL METHODS;

EID: 80054968481     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035050     Document Type: Conference Paper

References (11)

1. S. Osher and R. Fedkiw, "Level Set Methods: An overview and Some Recent Results," J. Comp. Phys., vol. 169, no. 2, 2001.
2. F. Gibou, R. Fedkiw, R. Caflisch and S. Osher, "A Level Set Approach for the Numerical Simulation of Dendritic Growth," J. Sci. Comput., vol. 19, pp. 183-199, 2003.
3. K.F Kelton, A.L Greer and C.V. Thompson, "Transient Nucleation in condensed systems," J. Chem. Phys., vol. 79, no. 12, 1983.
4. B. Hyot, L. Poupinet, V. Gehanno and P.J Desre, "Analysis of writing and erasing behaviours in phase change materials," J. Magn. Magn. Mater., vol. 249, pp. 504-508, 2002.
5. C.V. Thompson and F. Spaepen, "On the approximation of the free energy change on crystallization," Acta Metallurgica, vol. 27, pp. 1855-1859, 1979.
6. D.H. Kim, F. Merget, M. Först, H. Kurz, "Three-dimensional simulation model of switching dynamics in phase change random access memory cells," J. Appl. Phys., vol. 101, 2007
7. C. David Wright, M. Armand and M.M. Aziz, "Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes," IEEE Trans. Nanotechnol., vol. 5, no. 1, p. 50, 2006.
8. A. Redaelli, A. Pirovano, A. Benvenuti, et A. L. Lacaita, "Threshold switching and phase transition numerical models for phase change memory simulations", J. Appl. Phys., vol. 103, no. 11, 2008.
9. D. Ielmini et Y. Zhang, "Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices", J. Appl. Phys., vol. 102, no. 5, p. 054517, 2007.
10. I. V. Karpov, M. Mitra, D. Kau, G. Spadini, Y. A. Kryukov, et V. G. Karpov, "Evidence of field induced nucleation in phase change memory", Appl. Phys. Lett., vol. 92, no. 17, p. 173501, 2008.
11. B. Rajendran, J. Karidis, M-H. Lee, M. Breitwisch, G.W. Burr, Y-H. Shih, et al., "Analytical Model for RESET operation of Phase Change Memory," IEDM Technical Digest vol. 1, pp. 5-22, 2008.