Analytical model for RESET operation of phase change memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Rajendran, B ^a   Karidis, J ^a   Lee, M H ^b   Breitwisch, M ^a   Burr, G W ^c   Shih, Y H ^b   Cheek, R ^a   Schrott, A ^a   Lung, H L ^b   Lam, C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELS; CELL DIMENSIONS; DYNAMIC RESISTANCES; FUNDAMENTAL PHYSICS; INVERSE RELATIONSHIPS; MATERIAL PARAMETERS; PHASE-CHANGE MEMORIES; PROGRAMMING CURRENTS;

COMPUTER SIMULATION; ELECTRON DEVICES;

PHASE CHANGE MEMORY;

EID: 64549147015     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796748     Document Type: Conference Paper

References (6)

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