Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution

Precision Engineering

Volumn 36, Issue 1, 2012, Pages 137-140

  Kubota, Akihisa ^a   Yoshimura, Masahiko ^a   Fukuyama, Sakae ^a   Iwamoto, Chihiro ^a   Touge, Mutsumi ^a  

^a KUMAMOTO UNIVERSITY   (Japan)

Author keywords

Atomically flat; Damage free; Planarization; Polishing; Silicon carbide (SiC)

Indexed keywords

4H-SIC SUBSTRATE; ABRASIVE PARTICLES; ATOMICALLY FLAT; DAMAGE-FREE; DIFFERENTIAL INTERFERENCE CONTRAST MICROSCOPY; HIGH EFFICIENCY; HYDROXYL RADICALS; INTERFEROMETRIC MICROSCOPY; OXIDE LAYER; PLANARIZATION; SIC SUBSTRATES; SUB-SURFACE DAMAGE; SURFACE PLANARIZATION;

ABRASIVES; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; HYDROGEN PEROXIDE; OXIDATION; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 80054886070     PISSN: 01416359     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.precisioneng.2011.09.003     Document Type: Article

References (6)

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