Optimization of thin AlN sputtered films for X-band BAW resonators

Proceedings - IEEE Ultrasonics Symposium

Volumn , Issue , 2010, Pages 1688-1691

  Iborra, E ^a   Clement, M ^a   Capilla, J ^a   Olivares, J ^a   Felmetsger, V ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b OEM Group Incorporated   (United States)

Author keywords

AlN; high frequency BAW resonator; sputtering

Indexed keywords

ALN; ALN FILMS; BAW RESONATOR; BOTTOM ELECTRODES; CRYSTAL QUALITIES; FILTER FABRICATION; FREQUENCY RESPONSE MEASUREMENT; FTIR; HIGH FREQUENCY; IRIDIUM ELECTRODES; MATERIAL COUPLING FACTORS; PIEZOELECTRIC ACTIVITY; POROUS SIO; PRE-DEPOSITION; QUALITY FACTORS; RF PLASMA; SPUTTERED FILMS; XRD;

FREQUENCY RESPONSE; IRIDIUM; NITRIDES; OPTIMIZATION; PLASMA DEPOSITION; RESONATORS; SILICON COMPOUNDS; ULTRASONICS;

ALUMINUM NITRIDE;

EID: 80054730031     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2010.5935515     Document Type: Conference Paper

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