Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Jiang, A Q ^a   Liu, X B ^a   Zhang, Q ^b  

^a FUDAN UNIVERSITY   (China)

^b CRANFIELD UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; COERCIVE VOLTAGES; DIFFERENT DOMAINS; DOMAIN SWITCHINGS; FERROELECTRIC DOMAINS; RETENTION TIME;

FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HYSTERESIS; POLARIZATION; SWITCHING; THIN FILMS;

HYSTERESIS LOOPS;

EID: 80053971393     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3647577     Document Type: Article

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