Coexistence of exchange bias and magnetization pinning in the MnO x/GaMnAs system

Journal of Physics Condensed Matter

Volumn 23, Issue 41, 2011, Pages

  Huang, P W ^a   Huang, J H ^a   Yen, C H ^a   Cheng, C Y ^a   Xu, F ^b   Ku, H C ^a   Lee, S F ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; AS-GROWN; BI-LAYER; EXCHANGE BIAS; INTERFACIAL SPINS; MODEL-BASED OPC;

GALLIUM; MAGNETIZATION; MANGANESE; X RAY PHOTOELECTRON SPECTROSCOPY;

MANGANESE OXIDE;

EID: 80053610270     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/41/415801     Document Type: Article

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