Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell

Solar Energy Materials and Solar Cells

Volumn 95, Issue 12, 2011, Pages 3592-3595

  Lee, Eunjoo ^a   Lee, Hyunwoo ^a   Choi, Junyoung ^a   Oh, Dongjun ^a   Shim, Jimyung ^a   Cho, Kyungyeun ^a   Kim, Jisun ^a   Lee, Soohong ^b   Hallam, Brett ^c   Wenham, Stuart R ^c   Lee, Haeseok ^a  

^a Shinsung Solar Energy   (South Korea)

^b Sejong University   (South Korea)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Laser doping; Plating; Selective emitter; Silicon; Solar cell

Indexed keywords

COMMERCIAL GRADE; CRYSTALLINE SI; FILL FACTOR; LASER DOPING; METALLIZATION PROCESS; OVERPLATING; P-TYPE; SELECTIVE EMITTERS; SI SUBSTRATES;

PLATING; SEMICONDUCTOR DOPING; SILICON; SILICON NITRIDE; SOLAR CELLS;

EFFICIENCY;

EID: 80053591539     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.07.030     Document Type: Article

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