Performance, power, and reliability tradeoffs of STT-RAM cell subject to architecture-level requirement

IEEE Transactions on Magnetics

Volumn 47, Issue 10, 2011, Pages 2356-2359

  Li, Hai ^a   Wang, Xiaobin ^b   Ong, Zhong Liang ^c   Wong, Weng Fai ^c   Zhang, Yaojun ^d   Wang, Peiyuan ^d   Chen, Yiran ^d  

^a POLYTECHNIC UNIVERSITY   (United States)

^b SEAGATE TECHNOLOGY   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d PA 15260   (United States)

Author keywords

MRAM; nonvolatility; spin torque; spintronic

Indexed keywords

CACHE MEMORY; COMMERCE; MAGNETIC DEVICES; MRAM DEVICES; SPINTRONICS; SWITCHING;

ARCHITECTURAL LEVELS; MAGNETIC TUNNELING JUNCTIONS; MRAM; NONVOLATILITY; RELIABILITY TRADEOFFS; SPIN TORQUE; SPIN-TRANSFER TORQUE RANDOM ACCESS MEMORY (STT-RAM); SWITCHING PERFORMANCE;

RANDOM ACCESS STORAGE;

EID: 80053507749     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2011.2159262     Document Type: Article

References (16)

1. X. Dong, "Circuit and microarchitecture evaluation of 3D stacking magneticRAM(MRAM) as a universal memory replacement," in Proc. 45th Design Automation Conf., Jun. 2008, pp. 554-559.
2. G. Sun et al., "A novel architecture of the 3D stackedMRAML2 cache for CMPs," in IEEE 15th Int. Symp. High Perform. Comput. Architect., Feb. 2009, pp. 239-249.
3. Z. Diao et al., "Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory," J. Phys.: Cond. Matter, vol. 19, no. 16, p. 165209, 2007.
4. D. Weller and A. Moser, "Thermal effect limits in ultrahigh-density magnetic recording," IEEE Trans. Magn., vol. 35, no. 6, pp. 4423-4439, Nov. 1999.
5. A. Raychowdhury et al., "Design space and scalability exploration of 1T-1STT MTJ memory arrays in the presence of variability and disturbances," in IEEE Int. Electron Devices Meeting, Dec. 2009, pp. 1-4.
6. N. H. Bertram et al., "Dynamic-thermal effects in thin film media," IEEE Trans. Magn., vol. 37, no. 4, pp. 1521-1527, Jul. 200J.
7. X. Wang, Y. Zheng, H. Xi, and D. Dimitrov, "Thermal fluctuation effects on spin torque induced switching: Mean and variations," J. Appl. Phys., vol. 103, p. 034507, 2008.
8. X.Wang, W. Zhu, H. Xi, and D. Dimitrov, "Relationship between symmetry and scaling of spin torque thermal switching barrier," Appl. Phys. Lett., vol. 93, p. 102508, 2008.
9. X. Wang, "Magnetization dynamics symmetry in spin torque induced magnetization switching," Symmetry, vol. 2, no. 2, p. 99, 2010.
10. X. Wang et al., "Spin torque induced magnetization switching variations," IEEE Trans. Magn., vol. 45, no. 4, p. 2038, 2009.
11. X.Wang, Y. Chen, H. Li, D. Dimitrov, and H. Liu, "Spin torque random access memory down to 22 nm technology," IEEE Trans. Magn., vol. 44, no. 11, pp. 2479-2482, Nov. 2008.
12. Y. Chen et al., "Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM," in Proc. 16th Int. Symp. Low Power Electron. Design, Aug. 2010, pp. 1-G.
13. N. H. Bertram, X.Wang, and V. L. Safonov, "Dynamic-thermal effects in thin film media," IEEE Trans. Magn., vol. 37, no. 4, pp. 1521-1527, 200J.
14. J. L. Hennessy and D. A. Patterson, Computer Architecture: A Quantitative Approach, 3rd ed. San Mateo, CA: Morgan Kaufmann, 2002.
15. D. Weaver, Pre-Compiled Little-Endian Alpha ISA SPEC2000 Binaries [Online].Available: http://www.eecs.umich.edu/~chriswea/benchmarks/ spec2000.html
16. C. Smullen, IV et al., "Relaxing non-volatility for fast and energy-efficient STT-RAM caches," in Proc. 2011 HPCA, 201J.