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Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

Hydrogen impurities and native defects in CdO

(4) Amini, M N a Saniz, R a Lamoen, D a Partoens, B a

a UNIVERSITY OF ANTWERP (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY LEVEL; COMPARISON WITH EXPERIMENTS; CONDUCTION-BAND MINIMUM; FIRST-PRINCIPLES CALCULATION; HYDROGEN IMPURITY; HYDROGEN INTERSTITIALS; INTERSTITIAL DEFECTS; MULTICENTER BONDS; NATIVE DEFECT; SHALLOW DONORS; ZNO;

CADMIUM COMPOUNDS; CALCULATIONS; CHEMICAL POTENTIAL; EXPERIMENTS; HYDROGEN; LOCAL DENSITY APPROXIMATION; OXYGEN; POINT DEFECTS; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 80053506640 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3641971 Document Type: Article

Times cited : (13)

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