Thermoelectric effect in high mobility single layer epitaxial graphene

Applied Physics Letters

Volumn 99, Issue 13, 2011, Pages

  Wu, Xiaosong ^a,b   Hu, Yike ^a   Ruan, Ming ^a   Madiomanana, Nerasoa K ^a   Berger, Claire ^a,c   De Heer, Walter A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b PEKING UNIVERSITY   (China)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAPHENE; HIGH MOBILITY; NERNST SIGNAL; QUANTUM HALL REGIME; QUANTUM VALUES; SCREENING EFFECT; SILICON CARBIDE SUBSTRATES; SINGLE LAYER; TEMPERATURE DEPENDENCE; THERMOELECTRIC RESPONSE;

EPITAXIAL GROWTH; GRAPHENE; HALL MOBILITY; MAGNETIC FIELDS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053496075     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3641424     Document Type: Article

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