High spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions under DC bias currents

IEEE Transactions on Magnetics

Volumn 47, Issue 10, 2011, Pages 3373-3376

  Ishibashi, Shota ^a   Ando, Ken ^a   Seki, Takeshi ^a,c   Nozaki, Takayuki ^a   Kubota, Hitoshi ^b   Yakata, Satoshi ^b,d   Maehara, Hiroki ^b   Fukushima, Akio ^b   Yuasa, Shinji ^b   Suzuki, Yoshishige ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d INAMORI Frontier Research Center   (Japan)

Author keywords

Magnetoresistance effect; MgO based magnetic tunnel junctions (MTJs); spin torque diode effect; spin torque diode sensitivity

Indexed keywords

BIAS CURRENTS; COBALT COMPOUNDS; DIODES; MAGNESIA; OXIDE MINERALS; TORQUE; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

DAMPING TORQUES; DC-BIAS CURRENT; DIODE EFFECTS; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE EFFECTS; PERPENDICULAR MAGNETIC FIELDS; SPIN TORQUE; SPIN TRANSFER TORQUE;

MAGNETIC DEVICES;

EID: 80053483923     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2011.2159830     Document Type: Article

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