An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer

Optoelectronics Letters

Volumn 7, Issue 5, 2011, Pages 330-333

  Song, Peng fei ^a   Qin, Wen jing ^a   Ding, Guo jing ^a   Yan, Qi qi ^a   Yang, Li ying ^a   Yin, Shou gen ^a  

^a TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-STABLE; AMBIENT CONDITIONS; BLOCKING LAYERS; FILL FACTOR; INDIUM TIN OXIDE; INVERTED STRUCTURE; METHYL ESTERS; OPTIMUM THICKNESS; PHOTOVOLTAIC DEVICES; POWER CONVERSION EFFICIENCIES; SELECTIVE LAYERS; ZNIC OXIDE; ZNO;

BUTYRIC ACID; CONVERSION EFFICIENCY; FATTY ACIDS; INDIUM COMPOUNDS; PHOTOVOLTAIC EFFECTS; SILVER; TIN; TIN OXIDES; ZINC OXIDE;

MOLYBDENUM OXIDE;

EID: 80053467954     PISSN: 16731905     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11801-011-1061-4     Document Type: Article

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