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Volumn 98, Issue 10, 2011, Pages

Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BIMOLECULAR RECOMBINATION; BLOCKING LAYERS; CONTACT AREAS; ELECTRON TRANSPORT; FILL FACTOR; INDIUM TIN OXIDE; INVERTED STRUCTURE; LAYER THICKNESS; METHYL ESTERS; OPTIMUM CONDITIONS; ORGANIC MATERIALS; ORGANIC PHOTOVOLTAIC DEVICES; ORGANIC SOLAR CELL; POWER CONVERSION EFFICIENCIES; THICKNESS DEPENDENCE; VERTICALLY ALIGNED; ZINC OXIDE NANOROD ARRAYS; ZNO NANOROD;

EID: 79952681100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3554381     Document Type: Article
Times cited : (52)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.