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Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

Magnetic field influence on the transient photoresistivity of defect-induced magnetic ZnO films

(6) Zapata, C a Khalid, M b Simonelli, G a Villafuerte, M a Heluani, S P a Esquinazi, P b

a UNIVERSIDAD NACIONAL DE TUCUMÁN (Argentina)

b UNIVERSITY OF LEIPZIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; EFFECT OF MAGNETIC FIELD; FERROMAGNETIC FILMS; LIFE-TIMES; MAGNETIC FIELD INFLUENCE; MAGNETIC ORDERS; PHOTO-CARRIERS; RECOMBINATION PROCESS; ZNO; ZNO FILMS;

CRITICAL CURRENTS; DEFECTS; FERROMAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; PHOTOELECTRICITY; ZINC OXIDE;

MAGNETIC FIELDS;

EID: 80053196879 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3640231 Document Type: Article

Times cited : (10)

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