SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 9 PART 1, 2011, Pages

Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

Author keywords

[No Author keywords available]

Indexed keywords

AU ELECTRODES; ION BEAM BOMBARDMENT; ON STATE CURRENT; ON/OFF RATIO; SOLUTION-PROCESSED; TRANSMISSION LINE METHODS;

CONTACT RESISTANCE; ION BEAMS; ION BOMBARDMENT; THIN FILM TRANSISTORS; THIN FILMS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 80053009599 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.098003 Document Type: Article

Times cited : (3)

References (13)

1
- 50649110320
- T. Fujigaya and N. Nakashima: Polym. J. 40 (2008) 577.
- (2008) Polym. J , vol.40 , pp. 577
- Fujigaya, T.¹ Nakashima, N.²

2
- 79951881674
- H. Ozawa, N. Ide, T. Fujigaya, Y. Niidome, and N. Nakashima: Chem. Lett. 40 (2011) 239.
- (2011) Chem. Lett , vol.40 , pp. 239
- Ozawa, H.¹ Ide, N.² Fujigaya, T.³ Niidome, Y.⁴ Nakashima, N.⁵

3
- 79960689020
- X. YI, H. Ozawa, G. Nakagawa, T. Fujigaya, N. Nakashima, and T. Asano: Jpn. J. Appl. Phys. 50 (2011) 070207.
- (2011) Jpn. J. Appl. Phys , vol.50 , pp. 070207
- Yi, X.¹ Ozawa, H.² Nakagawa, G.³ Fujigaya, T.⁴ Nakashima, N.⁵ Asano, T.⁶

4
- 73649094787
- S. C. Lim, J. H. Jang, D. J. Bae, G. H. Han, S. Lee, I. Yeo, and Y. H. Lee: Appl. Phys. Lett. 95 (2009) 264103.
- (2009) Appl. Phys. Lett , vol.95 , pp. 264103
- Lim, S.C.¹ Jang, J.H.² Bae, D.J.³ Han, G.H.⁴ Lee, S.⁵ Yeo, I.⁶ Lee, Y.H.⁷

5
- 78650757640
- H. Lee, M. Lee, S. Namgung, and S. Hong: ACS Nano 4 (2010) 7612.
- (2010) ACS Nano , vol.4 , pp. 7612
- Lee, H.¹ Lee, M.² Namgung, S.³ Hong, S.⁴

6
- 33847718674
- L. Dong, S. Youkey, J. Bush, J. Jiao, V. M. Dubin, and R. V. Chebiam: J. Appl. Phys. 101 (2007) 024320.
- (2007) J. Appl. Phys , vol.101 , pp. 024320
- Dong, L.¹ Youkey, S.² Bush, J.³ Jiao, J.⁴ Dubin, V.M.⁵ Chebiam, R.V.⁶

7
- 80053008236
- Y. Chai, A. Hazeghi, K. Takei, H.-Y. Chen, P. C. H. Chan, A. Javey, and H.-S. P. Wong: IEDM Tech. Dig., 2010, p. 9.2.1.
- (2010) IEDM Tech. Dig , pp. 921
- Chai, Y.¹ Hazeghi, A.² Takei, K.³ Chen, H.-Y.⁴ Chan, P.C.H.⁵ Javey, A.⁶ Wong, H.-S.P.⁷

8
- 74949114828
- K. Rykaczewski, M. R. Henry, S. Kim, A. G. Fedorov, D. Kulkarni, S. Singamaneni, and V. V. Tsukruk: Nanotechnology 21 (2010) 035202.
- (2010) Nanotechnology , vol.21 , pp. 035202
- Rykaczewski, K.¹ Henry, M.R.² Kim, S.³ Fedorov, A.G.⁴ Kulkarni, D.⁵ Singamaneni, S.⁶ Tsukruk, V.V.⁷

9
- 0001672081
- H. H. Berger: Solid-State Electron. 15 (1972) 145.
- (1972) Solid-State Electron , vol.15 , pp. 145
- Berger, H.H.¹

10
- 0038035209
- H. Lim, H. Jung, and S. Joo: Microelectron. Eng. 69 (2003) 81.
- (2003) Microelectron. Eng , vol.69 , pp. 81
- Lim, H.¹ Jung, H.² Joo, S.³

11
- 21944434618
- M. M. Brzhezinskaya, E. M. Baitinger, V. V. Shnitov, and A. B. Smirnov: Phys. Solid State 47 (2005) 772.
- (2005) Phys. Solid State , vol.47 , pp. 772
- Brzhezinskaya, M.M.¹ Baitinger, E.M.² Shnitov, V.V.³ Smirnov, A.B.⁴

12
- 33646911911
- B. Chen, J. Wei, P. Lo, Z. Pei, T. Chao, H. Lin, and T. Huang: Jpn. J. Appl. Phys. 45 (2006) 3680.
- (2006) Jpn. J. Appl. Phys , vol.45 , pp. 3680
- Chen, B.¹ Wei, J.² Lo, P.³ Pei, Z.⁴ Chao, T.⁵ Lin, H.⁶ Huan, T.⁷

13
- 0034274321
- Z. Wang, F. Zhu, W. Wang, G. Yu, and M. Ruan: Appl. Phys. A 71 (2000) 353.
- (2000) Appl. Phys. A , vol.71 , pp. 353
- Wang, Z.¹ Zhu, F.² Wang, W.³ Yu, G.⁴ Ruan, M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.