Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes

Optics Express

Volumn 19, Issue 105, 2011, Pages A1135-A1140

  Ma, Ming ^a   Mont, Frank W ^a   Cho, Jaehee ^a   Schubert, E Fred ^a,b   Kim, Gi Bum ^c   Sone, Cheolsoo ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT REFRACTION; REFRACTIVE INDEX; REFRACTOMETERS;

ALGAINP LEDS; CURING PROCESS; DUAL LAYER; ENCAPSULANTS; FRESNEL REFLECTIONS; GAN LEDS; LED CHIPS; LIGHT-EXTRACTION EFFICIENCY; RECTANGULAR PARALLELEPIPEDS; SINGLE LAYER;

LIGHT EMITTING DIODES;

EID: 80052701583     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.0A1135     Document Type: Article

References (13)

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