Physical insight into substitutional N-doped graphene nanoribbons with armchair edges

IEEE Transactions on Nanotechnology

Volumn 10, Issue 5, 2011, Pages 926-930

  Yu, Shan Sheng ^a   Zheng, Wei Tao ^a   Jiang, Qing ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

Doping; graphene; nanotechnology; nitrogen

Indexed keywords

AB INITIO; CONDUCTION-BAND MINIMUM; DEVICE CHARACTERISTICS; DOPED STRUCTURES; GRAPHENE NANORIBBONS; IMPURITY LEVEL; N-DOPED; N-TYPE SEMICONDUCTORS; POLARIZATION EFFECT;

CARBON NANOTUBES; CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; POLARIZATION; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

GRAPHENE;

EID: 80052642761     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2038050     Document Type: Article

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