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European Physical Journal B

Volumn 82, Issue 2, 2011, Pages 143-146

Interaction between stacking faults in pure Mg

(5) Fan, T W a Zhang, Q a Tang, B Y a,b Peng, L M c Ding, W J c

a XIANGTAN UNIVERSITY (China)

b GUANGXI UNIVERSITY (China)

c Shanghai Jiao Tong University (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; INTERACTION ENERGIES; INTERACTION MECHANISMS; INTERACTION MODEL; PURE MG; SHEAR CHARACTERISTICS; STRONG INTERACTION;

DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE;

STACKING FAULTS;

EID: 80052633279 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2011-20141-y Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.