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Volumn 19, Issue 6, 2011, Pages 706-714

Progress with epitaxy wrap-through crystalline silicon thin-film solar cells

Author keywords

Back contact; Crystalline silicon; Epitaxy; Isolation layer; Selective emitter; Thin film

Indexed keywords

ACTIVE LAYER; BACK CONTACT; BASE LAYERS; CRYSTALLINE SILICON; CRYSTALLINE SILICONS; DEPOSITION CHAMBERS; EMITTER CELLS; EPITAXIAL DEPOSITION; FILL FACTOR; GEOMETRICAL FORMS; HIGH QUALITY; ISOLATION LAYER; SELECTIVE EMITTER; SELECTIVE EMITTERS; SILICON SUBSTRATES; THIN-FILM SOLAR CELLS; VIA HOLE;

EID: 80052331987     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1091     Document Type: Article
Times cited : (1)

References (18)
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    • Reber, S.1    Hurrle, A.2    Eyer, A.3    Willeke, G.4
  • 13
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    • Studies of diffused phosphorus emitters: Saturation current, surface recombination velocity, and quantum efficiency
    • DOI 10.1109/16.46368
    • King RR, Sinton RA, Swanson RM. Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency. Electron Devices, IEEE Transactions 1990;37(2):365-371. (Pubitemid 20666236)
    • (1990) IEEE Transactions on Electron Devices , vol.37 , Issue.2 , pp. 365-371
    • King, R.R.1    Sinton, R.A.2    Swanson, R.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.