New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 22, Issue 1-3, 2004, Pages 108-110

  Fischer, F ^a   Grayson, M ^a   Schuberth, E ^b   Schuh, D ^a   Bichler, M ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b WALTHER MEISSNER INSTITUT   (Germany)

Author keywords

High mobility 2DEG; Low temperature transport; Quantum Hall anisotropy (1 1 0) GaAs

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRON GAS; ELECTRON MOBILITY; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; PYROMETERS;

HIGH-MOBILITY 2DEG; LOW-TEMPERATURE TRANSPORT; QUANTUM HALL ANISOTROPY (110) GAAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1842684836     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.227     Document Type: Conference Paper

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