Thermal annealing effects on the dynamic photoresponse properties of Al-doped ZnO nanowires network

Current Applied Physics

Volumn 11, Issue 6, 2011, Pages 1311-1314

  Kim, Kang Pil ^a   Chang, Daeic ^a   Lim, Sang Kyoo ^a   Lee, Soo Keun ^a   Lyu, Hong Kun ^a   Hwang, Dae Kue ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

Annealing; AZO nanowires; UV photodetectors

Indexed keywords

AL-DOPED ZNO; ANNEALING TEMPERATURES; AZO NANOWIRES; E-BEAM LITHOGRAPHY; FABRICATION PROCESS; LOW COSTS; NANOWIRE NETWORKS; NETWORK-BASED; PHOTOCURRENT DECAY; PHOTORESPONSES; POTENTIAL BARRIERS; THERMAL ANNEALING EFFECTS; UV ILLUMINATIONS; UV PHOTODETECTORS; UV SOURCES;

ANNEALING; FABRICATION; LITHOGRAPHY; OPTOELECTRONIC DEVICES; PHOTODETECTORS; ZINC OXIDE;

NANOWIRES;

EID: 80052265188     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.03.065     Document Type: Article

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