Fabrication and electrical characterization of p-Sb2S 3/n-Si heterojunctions for solar cells application

Current Applied Physics

Volumn 11, Issue 6, 2011, Pages 1265-1268

  Abd El Rahman, K F ^a,b   Darwish, A A A ^c  

^a Ain Shams University   (Egypt)

^b The British University in Egypt   (Egypt)

^c SANA A UNIVERSITY   (Yemen)

Author keywords

Heterojunctions; I V characteristics; Photovoltaic

Indexed keywords

BUILT-IN POTENTIAL; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; ELECTRICAL CHARACTERIZATION; ELECTRICAL TRANSPORT PROPERTIES; IV CHARACTERISTICS; MULTI-STEP; PHOTOVOLTAIC; ROOM TEMPERATURE; SATURATION CURRENT; SINGLE-CRYSTAL SI; SOLAR CELL PARAMETERS; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; THERMAL EVAPORATION TECHNIQUE; TUNNELLING CURRENT;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; HETEROJUNCTIONS; SINGLE CRYSTALS; SOLAR ENERGY; SOLAR POWER GENERATION; THERMAL EVAPORATION; TRANSPORT PROPERTIES;

SILICON;

EID: 80052261670     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.12.006     Document Type: Article

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