Influence of the average Se-to-metal overpressure during co-evaporation of Cu(InxGa1-x)Se2

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7237-7240

  Wallin, E ^a   Jarmar, T ^a   Malm, U ^a   Edoff, M ^a   Stolt, L ^a  

^a Solibro Research AB   (Sweden)

Author keywords

CIGS; Co evaporation; Se pressure; Solar cells; Three stage process

Indexed keywords

ABSORBER LAYERS; BASELINE PROCESS; BULK RECOMBINATION; CDS; CHEMICAL BATH; CIGS; CO-EVAPORATIONS; CURRENT COLLECTION; DEVICE PERFORMANCE; DIVACANCIES; EFFECTIVE DOPING; ELECTRICAL CHARACTERIZATION; FILL FACTOR; INTRINSIC AND AL-DOPED ZNO; LOWER AVERAGE; OVER-PRESSURES; OVERPRESSURE; QUANTUM EFFICIENCY MEASUREMENTS; RATE RATIOS; THREE-STAGE PROCESS;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; COMPUTER SIMULATION; EVAPORATION; GALLIUM; MAGNETRONS; METALS; OPEN CIRCUIT VOLTAGE; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SOLAR ABSORBERS; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 80052178828     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.182     Document Type: Conference Paper

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