Influence of precursor stacking on the absorber growth in Cu(In,Ga)S 2 based solar cells prepared by a rapid thermal process

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7189-7192

  Merdes, S ^a   Mainz, R ^a   Rodriguez Alvarez, H ^a   Klaer, J ^a   Klenk, R ^a   Meeder, A ^b   Schock, H W ^a   Lux Steiner, M Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Sulfurcell Solartechnik GmbH   (Germany)

Author keywords

Chalcopyrite; Rapid thermal processing; Solar cell; Thin film

Indexed keywords

CHALCOPYRITE; COMPLEX PROCESSES; CU(IN ,GA)S; FORMATION KINETICS; METALLIC PHASE; METALLIC PRECURSOR; RAPID THERMAL PROCESS; SINGLE PHASE; TERNARY SULFIDE;

COPPER COMPOUNDS; FILM PREPARATION; GALLIUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REACTION RATES; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

COPPER;

EID: 80052178810     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.397     Document Type: Conference Paper

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