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Volumn 519, Issue 21, 2011, Pages 7553-7555
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Investigation of Cu(In,Ga)Se2/In2S3 diffuse interface by Raman scattering
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Author keywords
CIGSe; Raman
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Indexed keywords
BINARY ALLOYS;
DEPOSITION;
INDIUM SULFIDE;
IODINE COMPOUNDS;
RAMAN SCATTERING;
SURFACE DEFECTS;
CIGSE;
COMPOSITION PROFILE;
DEPOSITION TEMPERATURES;
DIFFUSE INTERFACE;
ORDERED DEFECT COMPOUNDS;
RAMAN;
SCATTERING TECHNIQUES;
SUBSTRATE TEMPERATURE;
SULFUR COMPOUNDS;
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EID: 80052165805
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.089 Document Type: Conference Paper |
Times cited : (15)
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References (12)
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