Polymorphism in CuInS2 epilayers: Origin of additional Raman modes

Applied Physics Letters

Volumn 80, Issue 4, 2002, Pages 562-564

  Alvarez Garcia J ^a   Perez Rodriguez A ^a   Barcones, B ^a   Romano Rodriguez A ^a   Morante, J R ^a   Janotti, A ^b   Wei, Su Huai ^b   Scheer, R ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL MODE; CHALCOPYRITE STRUCTURES; FIRST-PRINCIPLES; GROUP THEORY ANALYSIS; GROWTH CONDITIONS; ORDERED DOMAINS; ORDERED PHASE; PHASE DOMAIN; PHONON FREQUENCIES; RAMAN MODES; RELATIVE INTENSITY; SI(111) SUBSTRATE; TRANSMISSION ELECTRON DIFFRACTION;

ALGEBRA; CALCULATIONS; COPPER COMPOUNDS; EPITAXIAL FILMS; PHONONS; SEMICONDUCTING SILICON COMPOUNDS;

X RAY DIFFRACTION ANALYSIS;

EID: 79956027794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435800     Document Type: Article

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