Optoelectronic characteristics of Cu(In,Ga)(S,Se)2 thin film solar cells obtained from varied chalcogenization processes

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7324-7327

  Knecht, R ^a   Knipper, M ^a   Ohland, J ^a   Riedel, I ^a   Parisi, J ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Capacity voltage; Chalcogenization; Chalcopyrite solar cells; CIGSSe; Current voltage; External quantum efficiency

Indexed keywords

CAPACITY-VOLTAGE; CHALCOGENIZATION; CHALCOPYRITE SOLAR CELLS; CIGSSE; CURRENT VOLTAGE; EXTERNAL QUANTUM EFFICIENCY;

COPPER COMPOUNDS; OPEN CIRCUIT VOLTAGE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SULFUR;

GALLIUM;

EID: 80052165784     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.141     Document Type: Conference Paper

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