Influence of Cu off-stoichiometry on wide band gap CIGSe solar cells

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7228-7231

  Marko, Hakim ^a,b   Arzel, Ludovic ^a   Darga, Arouna ^c   Barreau, Nicolas ^a   Noël, Sébastien ^b   Mencaraglia, Denis ^c   Kessler, John ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b CEA GRENOBLE   (France)

^c UNIV PARIS SUD   (France)

Author keywords

Off stoichiometry tolerance; Thin film solar cells; Wide bandgap

Indexed keywords

ACTIVATION ENERGY; COPPER; COPPER COMPOUNDS; ELECTROPHYSIOLOGY; ENERGY GAP; OPEN CIRCUIT VOLTAGE; SELENIUM COMPOUNDS; SOLAR CELLS; STOICHIOMETRY; THIN FILMS;

ACTIVATION ENERGIES (EA); BINARY PHASIS; CIGSE SOLAR CELLS; CU(IN , GA)SE2; CURRENT COLLECTION; SPACE CHARGE REGIONS; VOLTAGE DEPENDENCIES; WIDE BAND GAP;

THIN FILM SOLAR CELLS;

EID: 80052150935     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.174     Document Type: Conference Paper

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