Graphitization of n-type polycrystalline silicon carbide and its application for micro- supercapacitors

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Volumn , Issue , 2011, Pages 1879-1882

  Liu, F ^a   Gutes, A ^a   Carraro, C ^a   Chu, J ^b   Maboudian, R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

graphitic carbon; graphitization; MEMS; silicon carbide; Supercapacitor

Indexed keywords

CARBON ELECTRODE; CHARGE/DISCHARGE; ENVIRONMENTALLY-FRIENDLY; FABRICATION PROCESS; GRAPHITIC CARBONS; HIGH CONDUCTIVITY; HIGH POWER DENSITY; LONG LIFE; NITROGEN-DOPED; POLY-SIC; POLYCRYSTALLINE 3C-SIC; SPECIFIC CAPACITANCE; SUPER CAPACITOR;

ACTUATORS; CAPACITANCE; CARBON NANOTUBES; COMPOSITE MICROMECHANICS; ELECTROLYTIC CAPACITORS; EPITAXIAL GROWTH; GRAPHITE; GRAPHITIZATION; MEMS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; MICROSYSTEMS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON CARBIDE; SOLID STATE DEVICES;

SOLID-STATE SENSORS;

EID: 80052124883     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TRANSDUCERS.2011.5969784     Document Type: Conference Paper

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