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Volumn 19, Issue 8, 2011, Pages 966-972

Low temperature-coefficient for solar cells processed from solar-grade silicon purified by metallurgical route

Author keywords

compensation; mobility; silicon; solar cell; temperature coefficient

Indexed keywords

BORON-OXYGEN COMPLEX; MINORITY CARRIER DIFFUSION LENGTH; PHOTOVOLTAIC PERFORMANCE; SI SOLAR CELLS; SOLAR MODULE; SOLAR PANELS; TEMPERATURE-COEFFICIENT;

EID: 80052097663     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1104     Document Type: Article
Times cited : (39)

References (18)
  • 5
    • 48249151470 scopus 로고    scopus 로고
    • Effects of the compensation level on the carrier lifetime of crystalline silicon
    • DOI: 10.1063/1.2961030.
    • Dubois S, Enjalbert N, Garandet JP,. Effects of the compensation level on the carrier lifetime of crystalline silicon. Applied Physics Letters 2008; 93: 032114. DOI: 10.1063/1.2961030.
    • (2008) Applied Physics Letters , vol.93 , pp. 032114
    • Dubois, S.1    Enjalbert, N.2    Garandet, J.P.3
  • 7
    • 47049092103 scopus 로고    scopus 로고
    • Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock
    • DOI: 10.1016/j.solmat.2008.04.020.
    • Degoulange J, Périchaud I, Trassy C, Martinuzzi S,. Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock. Solar Energy Materials and Solar Cells 2008; 92: 1269-1273. DOI: 10.1016/j.solmat.2008.04.020.
    • (2008) Solar Energy Materials and Solar Cells , vol.92 , pp. 1269-1273
    • Degoulange, J.1    Périchaud, I.2    Trassy, C.3    Martinuzzi, S.4
  • 8
    • 1442337113 scopus 로고    scopus 로고
    • Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
    • DOI: 10.1103/PhysRevB.69.024107.
    • Schmidt J, Bothe K,. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon. Physical Review B 2004; 69: 024107. DOI: 10.1103/PhysRevB.69.024107.
    • (2004) Physical Review B , vol.69 , pp. 024107
    • Schmidt, J.1    Bothe, K.2
  • 10
    • 55349141740 scopus 로고    scopus 로고
    • Temperature dependence of I-V characteristics and performance parameters of silicon solar cell
    • DOI: 10.1016/j.solmat.2008.07.010.
    • Singh P, Singh SN, Lal M, Husain M,. Temperature dependence of I-V characteristics and performance parameters of silicon solar cell. Solar Energy Materials and Solar Cells 2008; 92: 1611. DOI: 10.1016/j.solmat.2008.07.010.
    • (2008) Solar Energy Materials and Solar Cells , vol.92 , pp. 1611
    • Singh, P.1    Singh, S.N.2    Lal, M.3    Husain, M.4
  • 11
    • 0019561655 scopus 로고
    • Behavior of diffused junction silicon solar cells in the temperature range 77-500 K
    • Arora JD, Mathur PC,. Behavior of diffused junction silicon solar cells in the temperature range 77-500 K. Journal of Applied Physics 1980; 52: 3646-3650.
    • (1980) Journal of Applied Physics , vol.52 , pp. 3646-3650
    • Arora, J.D.1    Mathur, P.C.2
  • 14
    • 77950300412 scopus 로고    scopus 로고
    • Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation
    • DOI: 10.1016/j.sse.2010.02.002.
    • Veirman J, Dubois S, Enjalbert N, Garandet JP, Heslinga DR, Lemiti M,. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation. Solid State Electronics 2010; 54: 1302. DOI: 10.1016/j.sse.2010.02.002.
    • (2010) Solid State Electronics , vol.54 , pp. 1302
    • Veirman, J.1    Dubois, S.2    Enjalbert, N.3    Garandet, J.P.4    Heslinga, D.R.5    Lemiti, M.6
  • 16
    • 0037450271 scopus 로고    scopus 로고
    • Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
    • DOI: 10.1063/1.1544431.
    • Rein S, Glunz SW,. Electronic properties of the metastable defect in boron-doped Czochralski silicon: unambiguous determination by advanced lifetime spectroscopy. Applied Physics Letters 2003; 82: 1054-1056. DOI: 10.1063/1.1544431.
    • (2003) Applied Physics Letters , vol.82 , pp. 1054-1056
    • Rein, S.1    Glunz, S.W.2
  • 18
    • 77949693627 scopus 로고    scopus 로고
    • Temperature dependent carrier lifetime studies of Mo in crystalline silicon
    • DOI: 10.1063/1.3309833.
    • Paudyal BP, McIntosh KR, Macdonald DH, Coletti G,. Temperature dependent carrier lifetime studies of Mo in crystalline silicon. Journal of Applied Physics 2010; 107: 054511. DOI: 10.1063/1.3309833.
    • (2010) Journal of Applied Physics , vol.107 , pp. 054511
    • Paudyal, B.P.1    McIntosh, K.R.2    MacDonald, D.H.3    Coletti, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.