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Volumn 8, Issue , 2011, Pages 371-376

Growth and characterization of multicrystalline silicon ingots by directional solidification for solar cell applications

Author keywords

Directional solidification; Dislocation; Gettering; Multicrystalline silicon; Solar cell

Indexed keywords

CARRIER LIFETIME; COOLING; DISLOCATIONS (CRYSTALS); INGOTS; METAL CASTINGS; NUCLEATION; POLYSILICON; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; SOLIDIFICATION;

EID: 80052092791     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.152     Document Type: Conference Paper
Times cited : (21)

References (11)
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  • 3
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  • 4
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    • Metal precipitation at grain boundaries in silicon: Dependence of grain boundary character and dislocation character
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  • 6
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    • Fujiwara K, Pan W, Usami N, Sawada K, Toairin M, Nose Y et.al, "Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting", J. Acta Materialia, 54, 3191-3197, (2006). (Pubitemid 43928790)
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  • 8
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    • Ronald A. Sinton, Andreas Cuevas and Michael Stuckings, "Quasi-steady-state photo conductance, a new method for solar cell material and device characterization", 25th IEEE Photovoltaic Specialists Conference, Washington D.C, USA, (1996), 16-19.
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  • 9
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    • Fundamental study on Si melt growth toward engineering of microstructures in multicrystalline Si
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.