Growth and characterization of 240 kg multicrystalline silicon ingot grown by directional solidification

Solar Energy Materials and Solar Cells

Volumn 81, Issue 2, 2004, Pages 217-224

  Kim, Jung Min ^a   Kim, Young Kwan ^a  

^a SolarLight Ltd   (South Korea)

Author keywords

Directional solidification; HEM; Multicrystalline

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; HEAT EXCHANGERS; SILICON WAFERS; SOLAR CELLS; SOLIDIFICATION; THERMAL STRESS;

HEAT EXCHANGE METHOD (HEM); MICROCRYSTALLINE;

SILICON;

EID: 0742289221     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2003.11.020     Document Type: Article

References (4)

1. C.P. Khattak, H. Schmid, 26th IEEE PVSC Conference, Anaheim, CA, 1997.
2. Johan F. Nijs, Jozef Szlufcik, Jozef Poortmans, IEEE Trans. Electron Devices 46 (10) (1999) 1948-1968.
3. Nijs J., Sivoththaman S., Szlufcik J., De Clercq K. Sol. Energy Mater. Sol. Cell. 48:1997;199-217.
4. F. Shimura, Semiconductor Silicon Crystal Technology, Academic Press, New York, 1989, pp. 148-152.