Structural and thermoelectric properties of sintered silicon clathrates: Ba6Eu2Ga16Si30 nominal composition

IOP Conference Series: Materials Science and Engineering

Volumn 18, Issue SYMPOSIUM 9C, 2011, Pages

  Nakabayashi, T ^a,c   Hokazono, M ^a,c   Anno, H ^a,c   Ba, Y ^b,c   Koumoto, K ^b,c  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTIVITY; NOMINAL COMPOSITION; POWDER X RAY DIFFRACTION; RIETVELD STRUCTURE REFINEMENT; SILICON CLATHRATES; SINTERING TEMPERATURES; SPARK PLASMA SINTERING METHOD; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

BARIUM; CARRIER CONCENTRATION; CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; EUROPIUM; HYDRATES; RIETVELD REFINEMENT; SILICON; SPARK PLASMA SINTERING; STRUCTURAL CERAMICS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; X RAY DIFFRACTION;

GALLIUM;

EID: 80052080456     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/18/14/142008     Document Type: Conference Paper

References (12)

1. Slack G A 1997 Mat. Res. Soc. Symp. Proc. vol 478 ed by Tritt T M, Kanatzidis M G, Lyon H B Jr and Mahan G D (MRS Press, Warrendale, Pennsylvania) p 47-54
2. Cohn J L, Nolas G S, Fessatidis V, Metcalf T H and Slack G A 1999 Phys. Rev. Lett. 82 779-782
3. Nolas G, Cohn J L, Slack G A and Schujman S B 1998 Appl. Phys. Lett. 73 178-180
4. Mudryk Y, Rogl P, Paul C, Berger S, Bauer E, Hilscher G, Godart C and Nol H 2002 J. Phys.: Conden s. Matter 14 7991-8004
5. Anno H, Fukushima H, Koga K, Okita K and Matsubara K 2006 IEEE Proc. 25th. Int. Conf. on Thermoelectrics (ICT2006) (Vienna, Austria, August) p 36-37
6. Condron C L, Kauzlarich S M, Gascoin F and Snyder G J 2006 Chem. Mater. 18 4939-4945
7. Condron C L, Kauzlarich S M and Nolas G S 2007 Inorg. Chem. 46 2556-2562
8. Tang X, Li P, Deng S and Zhang Q 2008 J. Appl. Phys. 104 013706
9. Koga K, Suzuki K, Fukamoto M, Anno H, Tanaka T and Yamamoto S 2009 J. Electron. Mater. 38 1427-1432
10. Anno H, Nakabayashi T and Hokazono M 2010 Adv.Sci. Technol. 74 26-31
11. Izumi F and Ikeda T 2000 Mater. Sci. Forum 321-324 198
12. Bentien A, Nishibori E, Paschen S and Iversen B 2005 B. Phys. Rev. B 71 144107