Electronic structure and thermoelectric properties of si-based clathrate compounds

Journal of Electronic Materials

Volumn 38, Issue 7, 2009, Pages 1427-1432

  Koga, K ^a   Suzuki, K ^a   Fukamoto, M ^a   Anno, H ^a   Tanaka, T ^b   Yamamoto, S ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Ab initio calculations; Carrier density; Electronic structure; Plasma materials processing; Semiconductor materials; Silicon clathrate; Silicon compounds; Sintering; Thermoelectric materials; Thermoelectricity

Indexed keywords

AB INITIO CALCULATIONS; CARRIER DENSITY; CLATHRATE COMPOUND; CLATHRATES; EFFECTIVE MASS; PLASMA MATERIALS PROCESSING; POLYCRYSTALLINE SAMPLES; ROOM TEMPERATURE; SI-BASED; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES;

BARIUM; BARIUM COMPOUNDS; CALCULATIONS; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EUROPIUM; GERMANIUM; HYDRATES; MATERIALS; MOLECULAR SIEVES; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SPARK PLASMA SINTERING; STRUCTURAL PROPERTIES; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER;

SEMICONDUCTING SILICON;

EID: 67650502142     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0730-6     Document Type: Conference Paper

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