Voltage-dependent low-field resistivity of CaTiO3:Zn ceramics

Journal of Materials Chemistry

Volumn 21, Issue 34, 2011, Pages 12894-12900

  Zhang, Qi Long ^a,b   Masó, Nahum ^b   Liu, Yang ^b   Yang, Hui ^a   West, Anthony R ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPANTS; CHARGE COMPENSATION; CONSTANT PHASE ELEMENT; DC BIAS; DC BIAS VOLTAGE; EQUIVALENT ELECTRICAL CIRCUITS; GRAIN BOUNDARY CONDUCTIVITY; HIGHEST TEMPERATURE; LOW-FIELD EFFECT; OXIDE IONS; P-TYPE; PARALLEL COMBINATION; RC ELEMENTS; SAMPLE SURFACE;

BIAS VOLTAGE; CERAMIC MATERIALS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; IONIZATION; OXYGEN; OXYGEN VACANCIES;

ZINC;

EID: 80052064107     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c1jm11453k     Document Type: Article

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