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Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 1, 2011, Pages

Terahertz emission enhancement in InAs thin films using a silicon lens coupler

(5) Que, Christopher T a Edamura, Tadataka a,b Nakajima, Makoto a,c Tani, Masahiko a Hangyo, Masanori a,d

a UNIVERSITY OF FUKUI (Japan)

b CENTRAL RESEARCH LABORATORY (Japan)

c UNIVERSITY OF TOKYO (Japan)

d OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCEMENT FACTOR; FEMTO-SECOND LASER; FREE SPACE; INAS; SI SUBSTRATES; TERAHERTZ EMISSIONS; TERAHERTZ RADIATION; THZ WAVES;

SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; TERAHERTZ WAVES; THIN FILMS;

INDIUM ARSENIDE;

EID: 80052014363 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.080207 Document Type: Article

Times cited : (21)

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