Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses

Japanese Journal of Applied Physics

Volumn 48, Issue 1, 2009, Pages

  Que, Christopher T ^a   Edamura, Tadataka ^b   Nakajima, Makoto ^c   Tani, Masahiko ^d   Hangyo, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; LASER BEAMS; LASER PULSES; PULSE GENERATORS; PULSED LASER APPLICATIONS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

DEMBER EFFECTS; FEMTO SECOND LASER PULSE; GAAS; INAS; LOW-FREQUENCY COMPONENTS; REFLECTION GEOMETRIES; SI SUBSTRATES; SILICON SUBSTRATES; TERAHERTZ; TERAHERTZ RADIATIONS; THZ EMITTERS; THZ RADIATIONS; TRANSMISSION GEOMETRIES; ULTRA SHORT LASER PULSE;

ULTRASHORT PULSES;

EID: 59649125834     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.010211     Document Type: Article

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