Surface and bulk oxygen vacancy defect states near the Fermi level in 125 nm WO3-δ/TiO2 (110) films: A resonant valence band photoemission spectroscopy study

Journal of Physical Chemistry C

Volumn 115, Issue 33, 2011, Pages 16411-16417

  Braun, Artur ^a,b   Erat, Selma ^a,c,d   Zhang, Xiaojun ^e,f   Chen, Qianli ^a,c   Huang, Tzu Wen ^a   Aksoy, Funda ^f,g   Löhnert, Romy ^a,h   Liu, Zhi ^f   Mao, Samuel S ^e,f   Graule, Thomas ^a,i  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b UNIVERSITY OF HAWAII   (United States)

^c ETH ZURICH   (Switzerland)

^d MERSIN UNIVERSITY   (Turkey)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^g CUKUROVA UNIVERSITY   (Turkey)

^h UNIVERSITY OF APPLIED SCIENCES JENA   (Germany)

ⁱ TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER-TREATMENT; AMBIENT AIR; DEFECT STATE; ELECTRONIC DEFECTS; FILM COLOR; FILM QUALITY; FILM-SUBSTRATE INTERFACES; NON-STOICHIOMETRY; NONSTOICHIOMETRIC; OXIDATIVE TREATMENT; OXYGEN DEFICIENCY; OXYGEN VACANCY DEFECTS; POTENTIAL STRAIN; RESIDUAL DEFECTS; TIO; TOP SURFACE; VALENCE BAND PHOTOEMISSION SPECTRA; VALENCE BAND PHOTOEMISSION SPECTROSCOPIES; X-RAY REFLECTOMETRY;

DEFECTS; EMISSION SPECTROSCOPY; FERMI LEVEL; LATTICE MISMATCH; OXYGEN; PHOTOEMISSION; PULSED LASER DEPOSITION; SURFACE DEFECTS; TITANIUM DIOXIDE;

OXYGEN VACANCIES;

EID: 80051953891     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp202375h     Document Type: Article

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