Growth of Pr oxide films by atomic layer deposition using Pr(EtCp) 3, and their electrical properties

Journal of the Vacuum Society of Japan

Volumn 54, Issue 2, 2011, Pages 110-113

  Kondo, Hiroki ^a   Sakashita, Mitsuo ^a   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CURVE; GROWTH PROPERTIES; INTERFACE STATE DENSITY; POLYCRYSTALLINE; SI (001) SUBSTRATE; SI WAFER; SI(111) SUBSTRATE; THICKNESS VARIATION;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES;

OXIDE FILMS;

EID: 80051951361     PISSN: 18822398     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj2.54.110     Document Type: Article

References (9)

1. H. J. Osten, J. P. Liu, P. Gaworzewski, E. Bugiel and P. Zaumseil: Technical Digest IEDM 2000 (San Francisco, 2000) p. 653.
2. J. Dabrowski, V. Zavodinsky and A. Fleszar: Microelectron. Reliab., 41 (2001) p. 1093.
3. H. Kondo, S. Sakurai, A. Sakai, M. Ogawa and S. Zaima: Extended abstracts of 2008 International Conference on Solid State Devices and Materials (Tsukuba, Japan, 2008) p. 856.
4. L. Niinistoä , M. Nieminen, J. Paäivaäsaari, J. Niinistoä , M. Putkonen and M. Nieminenn: Phys. Stat. Sol. (a), 201, pp. 1443-1452, 2004.
5. M. Nieminen, M. Putkonen and L. Niinistoä : Appl. Surf. Sci. 174 (2001) p. 155.
6. H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima: Appl. Phys. Lett. 95, (2010) p. 012105.
7. O. Greis, R. Ziel, B. Breidenstein, A. Haase and T. Petzel: J. Alloys and Compounds 216 (1994) p. 255.
8. A. F. Andreeva, I. Y. Gilman, M. Y. Gamarnik and V. I. Dekhtyaruk: Inorganic Materials 22 (1986) p. 1155.
9. H. Kondo, H. Matsui, K. Furuta, M. Sakashita and S. Zaima: Jpn. J. Appl. Phys. 49 (2010) 04DA14.