Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

Nanotechnology

Volumn 22, Issue 36, 2011, Pages

  Gurevich, A S ^a   Kochereshko, V P ^a   Bleuse, J ^b   Mariette, H ^b   Waag, A ^c   Akimoto, R ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b CEA GRENOBLE   (France)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DENSITY; INTERFACE STATE; LONG LIFETIME; TIGHT BINDING MODEL;

ATOMIC SPECTROSCOPY; PHOTOLUMINESCENCE SPECTROSCOPY; ZINC COMPOUNDS;

CRYSTALS;

EID: 80051928193     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/36/365707     Document Type: Article

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