Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6321, Issue , 2006, Pages

  Gurevich, A S ^a   Kochereshko, V P ^a   Litvinov, A N ^a   Platonov, A V ^a   Zyakin, B A ^a   Waag, B A ^b   Landwehr, G ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Optical properties of interfaces; Wide gap II VI based nanostructures

Indexed keywords

ELECTRIC EXCITATION; ELECTRONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); OPTICAL PROPERTIES;

OPTICAL PROPERTIES OF INTERFACES; TAMM-LIKE INTERFACE; WIDE-GAP II-VI BASED NANOSTRUCTURES;

PHOTOLUMINESCENCE;

EID: 33751025434     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.680052     Document Type: Conference Paper

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