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International Journal of Mass Spectrometry

Volumn 306, Issue 1, 2011, Pages 51-56

Negative ion formation through dissociative electron attachment to GeH 4: Comparative studies with CH4 and SiH4

(6) Hoshino, M a Matejcik S b Nunes, Y c Ferreira Da Silva, F c Limao Vieira P a,c Tanaka, H a

a SOPHIA UNIVERSITY (Japan)

b Faculty of Natural Sciences (Slovakia)

c UNIVERSIDADE NOVA DE LISBOA (Portugal)

Author keywords

CVD and plasma etching; Dissociative electron attachment; Germane (GeH 4); Methane (CH4); Negative ion formation; Silane (SiH4)

Indexed keywords

EID: 80051905942 PISSN: 13873806 EISSN: None Source Type: Journal
DOI: 10.1016/j.ijms.2011.06.009 Document Type: Article

Times cited : (14)

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